Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Functional operation above the Recommended Operating Conditions is not implied. 1 mw mw/ C W mw/ C T J, T stg to +1 C THERMAL CHARACTERISTICS (Note 1) Characteristic Symbol Max Unit Thermal Resistance, JunctiontoAmbient R JA C/W Thermal Resistance, JunctiontoCase R JC 83.3 C/W Stresses exceeding Maximum Ratings may damage the device. Vdc Collector Current Continuous I C madc Total Device T A = C Derate above C Total Device T C = C Derate above C Operating and Storage Junction Temperature Range P D 6 P D 1. 1 N393, General Purpose Transistors NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage V CEO 4 Vdc CollectorBase Voltage V CBO 6 Vdc EmitterBase Voltage V EBO 6.
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